Structure and method for biasing phase change memory array for reliable writing

ABSTRACT

A memory array having memory cells comprising a diode and a phase change material is reliably programmed by maintaining all unselected memory cells in a reverse biased state. Thus leakage is low and assurance is high that no unselected memory cells are disturbed. In order to avoid disturbing unselected memory cells during sequential writing, previously selected word and bit lines are brought to their unselected voltages before new bit lines and word lines are selected. A modified current mirror structure controls state switching of the phase change material.

CLAIM OF PRIORITY

This application is a divisional of U.S. patent application Ser. No.12/952,944, “Structure And Method For Biasing Phase Change Memory ArrayFor Reliable Writing,” filed on Nov. 23, 2010, which is a divisional ofU.S. patent application Ser. No. 11/930,620, “Structure And Method ForBiasing Phase Change Memory Array For Reliable Writing,” filed on Oct.31, 2007, which is a continuation of U.S. patent application Ser. No.11/040,262, “Structure And Method For Biasing Phase Change Memory ArrayFor Reliable Writing,” filed on Jan. 19, 2005, all of which areincorporated herein by reference in its entirety.

RELATED APPLICATIONS

This application relates to Herner et al., U.S. Pat. No. 6,952,030,issued on Oct. 4, 2005, “High-Density Three Dimensional Memory Cell,”;which is a continuation of Herner et al., U.S. patent application Ser.No. 10/326,470, “An Improved Method for Making High-Density NonvolatileMemory,” filed Dec. 19, 2002 (since abandoned) and hereinafter the '470application, both assigned to the assignee of the present invention andhereby incorporated by reference in their entirety.

This application also relates to Scheuerlein et al, U.S. patentapplication Ser. No. 11/040,255, filed Jan. 19, 2005, entitled “ANon-Volatile Memory Cell Comprising a Dielectric Layer and a PhaseChange Material in Series” now abandoned; to Scheuerlein, U.S. Pat. No.7,259,038, entitled “NonVolatile Phase Change Memory Cell Having aReduced Thermal Contact Area”; and to Scheuerlein, U.S. Pat. No.7,465,951, issued Dec. 16, 2008, entitled “Write-Once Nonvolatile PhaseChange Memory Array”; all incorporated herein by reference.

BACKGROUND OF THE INVENTION

The invention relates to programming and reading a nonvolatile memorycell comprising a dielectric and/or diode and a phase-change element inseries.

Phase-change materials such as chalcogenides have been used innonvolatile memories. Such materials can exist in one of two or morestable states, usually high-resistance and low-resistance states. Inchalcogenides, the high-resistance state corresponds to an amorphousstate, while the low-resistance state corresponds to a more orderedcrystalline state. The conversion between states is generally achievedthermally.

Integrated circuit memories are typically large arrays of memory cellsconnected between bit lines and word lines. In order to achieve reliableprogramming and reading of the memory cells within the array, memorycells selected to be programmed or read must be isolated from memorycells that are not selected. It sometimes occurs that cells adjacent toselected cells are disturbed during a write operation, or that cells onthe same word line or bit line as selected cells may be disturbed duringthe write operation. This problem becomes increasingly important asoperating voltages are decreased, write speeds are increased, memorycell densities are increased, and array sizes are increased.

There is a need for improved methods of programming and reprogrammingthe memory cells. The cells must be programmed quickly, using lowcurrent, and in a manner that assures proper writing and reading ofmemory cells in the array. One problem when writing and reading memoriesis that switching occurs very fast, and sometimes a word line or bitline that was recently selected may not have returned to its restingvoltage when the next word line or bit line is selected, and selecting anew word line or bit line may cause unintentional programming (orreading) of a cell connected to a previously selected word line or bitline.

SUMMARY OF THE INVENTION

The present invention is defined by the appended claims, and nothing inthis section should be taken as a limitation on those claims. Ingeneral, the invention is directed to methods of programming an array ofnonvolatile memory cells each comprising a phase change element inseries with a diode. The invention takes advantage of the one-way natureof the diode and applies biasing voltages that minimize leakage currentthrough unselected cells. The invention preferably follows a preferredorder for biasing word lines and bit lines to decrease the likelihood ofprogramming or reading an unselected cell.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a characteristic curve for a two-state memory element such asa chalcogenide.

FIGS. 2 a and 2 b show movement between set and reset states for thememory element of FIG. 1.

FIG. 3 shows a prior art 3-dimensional memory cell.

FIG. 4 a shows a 3-dimensional memory cell usable with the presentinvention.

FIGS. 4 b and 4 c show alternatives to the memory cell of FIG. 4 a inwhich a narrow neck minimizes programming current.

FIG. 5 shows an array incorporating the memory cells of FIG. 4 a.

FIG. 6 shows a circuit diagram of memory cells usable with the presentinvention and programming levels applied according to the invention.

FIG. 7 shows set and reset pulses applied in conjunction with thepresent invention.

FIG. 8 shows a circuit for applying a selected pulse width and currentto a selected cell for switching the cell between high and lowresistance states.

FIG. 8 a shows driver circuit 74 of FIG. 8.

FIG. 8 b shows detail of sense amplifier 76 of FIG. 8.

FIG. 9 shows the circuit diagram of FIG. 6 with voltages for readingrather than programming.

FIG. 10 shows a portion of a 3-dimensional memory array furtherdescribed in U.S. patent application Ser. No. 10/403,844, showing auseful word line layout.

FIG. 11 shows structures for controlling current and pulse width in thecurrent mirror structure of FIG. 8.

FIG. 12 shows other structures for controlling current and pulse widthin the current mirror structure of FIG. 8.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS OF THE INVENTION

While many solid materials can change between crystalline and amorphousstates, in this discussion the term “phase change material” will be usedto describe a material that changes relatively easily from one stablestate to another. The change is typically from an amorphous state to acrystalline state or vice versa, but may include an intermediate change,such as from a more ordered crystalline state to an indeterminate stateto an amorphous state, or vice versa. Phase change material is convertedfrom one state to the other by heating to high temperature, then coolingat a selected rate. Chalcogenides are well-known phase change materials.

It is known to use phase change materials, such as chalcogenides, in anonvolatile memory cell, in which a high-resistance, amorphous staterepresents one memory state while a low-resistance, crystalline staterepresents the other memory state, where memory states correspond tovalues of 1 and 0. (If intermediate stable states are achieved, morethan two memory states can exist for each cell; for simplicity, theexamples in this discussion will describe only two memory states.)

FIG. 1 shows a characteristic curve for a phase change material such asa chalcogenide. Two curves represent the two states of the material.When the material is in a low resistance state, as voltage is increased,the material follows the “set curve”, where a relatively straight linerepresents a relatively linear relationship between voltage and current.As voltage increases, current correspondingly increases, causing thematerial to move first through a “set current range” and then a “resetcurrent range” to an indeterminate state labeled “X” in which thematerial does not exhibit either crystalline or amorphous properties.Alternatively, when the material is in a high resistance state, thematerial follows the “reset curve”, where a voltage increase produceshardly any current until a snap back voltage, labeled V3, is reached. Atthat point, resistance quickly decreases and the current moves into the“set range”. It can be seen that as current increases, the “reset curve”moves closer to the “set curve”. Maintaining the current in the “setrange” for a sufficient period of time for the material to change to itscrystalline state causes the material to converge to the “set curve”.Subsequently when the current is reduced from the “set range” thematerials cools slowly and the material stays in the set state. In afuture programming operation, increasing voltage then causes thematerial to follow the set curve through the set current range to thereset current range where the two curves coincide at the indeterminatestate X. From indeterminate state X, a rapid decrease in voltage andcurrent causes the material to quickly cool and solidify into anamorphous state.

FIG. 2 a shows that with this rapid cooling, at a voltage labeled V2,current quickly decreases to a low level (as the amorphous state isentered) such that the material now exhibits a high resistance.

FIG. 2 b shows movement along the reset curve of FIG. 1. Starting in thehigh resistance reset state R, voltage applied to the memory cellproduces very little current until the voltage reaches a snap-backvoltage V3, at which time voltage across the cell suddenly decreases andcurrent suddenly increases until the set current range is reached. Atthis point, if the phase change material is allowed to assume itsindeterminate state and then voltage is decreased slowly, the materialwill follow the characteristic curve “to set state S” as the materialcools and crystallizes into a low resistance state.

Chalcogenides are particularly useful examples of phase changematerials, but it will be understood that other materials, such assilicon, which undergo appropriate and reliably detectable stable phasechanges, can be used instead.

FIG. 3 shows a prior art nonvolatile memory cell in which a state changeelement 23 is placed in series with a steering element 22, such as adiode. Although steering of the signal is assisted by steering element22, it is necessary to use high current to achieve state change of theentire state change element 23.

To facilitate conversion, mechanisms have been used to concentrate heatin a relatively small area contacting the phase change material. FIG. 4a shows a memory cell further including a barrier layer 43 forconcentrating current into a small area. Such heat concentration isfurther described by Scheuerlein in U.S. patent application Ser. No.11/040,255, entitled “Non-Volatile Memory Cell Comprising a DielectricLayer and a Phase Change Material in Series”, now abandoned, which hasbeen incorporated by reference herein.

A voltage is applied across the dielectric or barrier layer 43sufficient to cause dielectric breakdown across the dielectric layer,creating a low-resistance rupture region (or, in some cases, possiblymore than one.) The diameter of such a rupture region is very small. Atypical rupture region formed by applying a voltage across a silicondioxide layer about 2 to 3 nanometers thick sufficient to causedielectric breakdown may be tens of nanometers in diameter.

Such a dielectric layer in which a low-resistance rupture region isformed is an example of an antifuse. An antifuse is characterized by theproperty of being insulating as formed, preventing current flow; then,when exposed to a high voltage, irreversibly changing its character tobecome conductive (at least in some regions) and allowing the flow ofcurrent.

The very narrow rupture region serves to focus the thermal energy intoan extremely small volume, aiding conversion of phase change material inseries with the dielectric layer having the rupture region. For example,the dielectric layer having the rupture region and the phase changematerial may be formed in series, and interposed between conductors.Other elements may exist in the cell, such as a heater layer and adiode.

The barrier layer in the cell of FIG. 4 a may be ruptured in amanufacturing environment by applying a high voltage to a selected cell,for example about eight volts in a 2.5 volt system, and grounding theword line. Unselected word lines may be held at about seven volts, andunselected bit lines may be held at about one volt during this ruptureprocess. Preferred methods of rupturing the bits are described in moredetail in U.S. patent application Ser. No. 10/403,844 filed byScheuerlein on Mar. 31, 2003 entitled “Word Line Arrangement HavingMulti-Layer Word Line Segments for Three-Dimensional Memory Array”,which is incorporated herein by reference.

In some embodiments, all memory cells to be used as addressable memorymay be ruptured in this manufacturing step to prepare the memory cellsfor user program operations. The rupture process may leave the rupturedbits in the reset state or the set state. However, some bits on thechip, usually control bits, may be left not ruptured in thismanufacturing step. These portions of the memory may then operate asantifuse memory cells instead of phase change memory cells. The statesof these control bits provides permanent data bits useful for variouspurposes. These antifuse memory cells are useful to control thecircuitry on the chip for trimming analog circuits, for imprintingmanufacturing information, for setting redundancy address matchinginformation, for bad bit pointer information, for setting a uniquedevice identifier used for copyright protection control techniques, foraltering the interface function of the device, for indicating to logiccircuits on the chip that portions of the array are locked and thecircuitry prevents any further programming of those portions, and forother customizable features of the device. In one embodiment, rupturingthese bits requires the use of test inputs that are not possible toactivate or access after manufacturing is completed. In one embodiment,the memory line drivers circuits, write circuits, and sense amplifiercircuits are shared between the two types of memory bits. In anotherembodiment, the antifuse cells are in a separate array with separatedriver and read-write circuits. In either case the circuitry of FIG. 6,described in more detail below, may be used after manufacture to rupturethe antifuse memory cells by increasing the bias levels to the highervoltage levels described above. The antifuse memory bits are read usingcircuitry shown in FIG. 9 and described in further detail below.

Referring to FIG. 4 a, bottom conductor or input terminal 20 is formedof a conductive material, for example a refractory metal or refractorymetal compound such as tungsten or titanium tungsten. In this exemplarycell, bottom conductor 20 is in the form of a rail. As shown in FIG. 4a, barrier layer 43 of, for example, titanium nitride may be usedbetween diode 42 and state change element 23. This memory cell contactsan output terminal 21 in the form of a rail-shaped top conductor. Topconductor 21 is preferably perpendicular to bottom conductor 20. In oneembodiment shown in FIG. 2 of U.S. patent application Ser. No.11/040,255, entitled “Non-Volatile Memory Cell Comprising a DielectricLayer and a Phase Change Material in Series” now abandoned,(incorporated herein by reference), the rail shaped conductor 21 is amultilayer structure including a layer of barrier material such as TiNand a layer of phase change material.

The cells just described are just a few examples of the forms that anonvolatile memory cell formed according to the present invention maytake; clearly many other configurations are possible. For example, thememory cell just described includes a non-ohmic conductive element,diode 42, to serve as an isolation device. A non-ohmic conductiveelement is characterized by a non-linear current vs. voltage curve.Other non-ohmic elements may be used in place of the diode. For example,a metal-insulator-metal (MIM) device consists of two metal (ormetal-like) layers separated by a very thin insulator layer. Whensufficient voltage is applied, charge carriers can tunnel across theinsulator layer, but do not permanently damage it, as in an antifuse. Inalternative embodiments of the present invention, the diode 42 of thememory cell could be replaced with a MIM device.

It will be understood, of course, that many variations on the cell ofFIG. 4 a are possible. The barrier layer 43, phase change layer 23, anddiode layer 42 need not appear in the same orientation or order shown inFIG. 4 a. As shown in FIG. 4 b, a barrier layer 19 of, for example,titanium nitride can be located between input terminal 20 and diode 42,and another barrier layer 24 can be adjacent conductor 25 as part ofoutput terminal 21. State change material 23 can also be part of outputterminal 21 and shaped as a rail.

FIG. 4 b further shows a memory cell including a laterally etchedreduced-area heater layer 44 for concentrating heat into a small areafor faster heating with less current. Resistive heater element 44 isformed from a resistive material such as titanium nitride. Such heatconcentration is further described by Scheuerlein in U.S. Pat. No.7,259,038, “A Non-Volatile Phase Change Memory Cell Having a ReducedThermal Contact Area,” which has been incorporated by reference herein.Lateral etching is used to form a reduced area of layer 44. When currentflows through the memory cell, heat is concentrated near the small areaof layer 44 and converts a small region of the phase change material 23.With this heat concentration, less energy and less current are requiredto reach the “set range” and “reset range” of material 23.

Lateral etching of heater element 44 may be achieved by changing thechemistry of etching materials to laterally etch the heater elementmaterial, as further explained by Scheuerlein in concurrently filed U.S.Pat. No. 7,259,038.

FIG. 4 c shows yet another alternative memory cell structure in whichthe state change material 23 rather than the heater material 44 has beennarrowed for more efficient heating to achieve state change. Such astructure may be achieved by forming a narrow post of sacrificialmaterial, filling and planarizing around the narrow sacrificial post,and removing the sacrificial post to expose heater element 44, andapplying the state change material 23, which then contacts heaterelement 44 in a narrow region. The structure of FIG. 4 c is alsodiscussed in detail in the above mentioned U.S. Pat. No. 7,259,038incorporated herein by reference. See particularly the discussion ofFIGS. 3 a-3 e of that application.

The barrier layer can be above the phase change material rather thanbelow, for example, or the diode can be above both the barrier layer,heater layer, and phase change layer. In some three-dimensionalembodiments with multiple layers of memory cells, both the illustratedand reverse orders of layers are preferably used on different memorylayers.

FIG. 5 shows an array incorporating memory cells 40 of the type shown inFIG. 4 a. It will be understood, however, that these details are notintended to be limiting, and that many of these details can be modified,omitted or augmented while the results still fall within the scope ofthe invention. FIG. 5 shows a single memory level. Additional memorylevels can be stacked, each monolithically formed above the one belowit. Conductive lines in each memory level can be segmented orcontinuous, and two memory levels can share or not share a conductiveline (input or output terminal).

The photolithography techniques described in Chen, U.S. Pat. No.7,172,840, “Photomask Features with Interior Nonprinting Window UsingAlternating Phase Shifting,” issued Feb. 6, 2007; or Chen, U.S. patentapplication Ser. No. 10/815,312, Photomask Features with ChromelessNonprinting Phase Shifting Window,” filed Apr. 1, 2004, now abandoned,both owned by the assignee of the present invention and herebyincorporated by reference, can advantageously be used to perform anyphotolithography step used in formation of a memory array according tothe present invention.

While the structure of the array just described diverges in someimportant ways from the structure of the array of Herner et al.,wherever they are the same, the fabrication methods of Herner et al. canbe used. For clarity, not all of the fabrication details of Herner etal. were included in this description, but no part of that descriptionis intended to be excluded.

A layer or element is considered to be in thermal contact with phasechange material when thermal events within that layer or element arecapable of thermally affecting the phase change material sufficient tocause it to detectably change phase. In some embodiments, it ispreferred to place antifuse or heater layers in thermal contact with thephase change material to assist with phase change heating.

Circuitry and Programming

The biasing scheme of the present invention guarantees that the voltageacross unselected and half-selected cells is not sufficient to causeinadvertent conversion of those cells, and allows precise control of thepower delivered to the cell to be programmed. The biasing scheme alsominimizes leakage current through unselected and half-selected cells.

FIG. 6 shows a circuit representation, and may be a representation of anarray such as shown in FIG. 5. In FIG. 6, word lines are drawnhorizontally and bit lines are drawn vertically. Memory cells are drawndiagonally, and each is shown comprising a diode and a variableresistor. Thus, even though FIG. 6 is drawn as a flat structure, apreferred structure may be a 3-dimensional structure in which word linesare in one layer, bit lines are in another layer, and memory cells areoriented vertically between the layers. It may be preferred to form bitlines and word lines on many layers above a semiconductor substrate toimplement an integrated fully three-dimensional memory array. Anyantifuse or other barrier material is not shown in FIG. 6, but ispreferably included.

In FIG. 6, the diodes of memory cells have their anodes in the directionof the bit lines and their cathodes in the direction of the word lines.A positive voltage is applied to the bit line of the selected memorycell, a negative (or ground) voltage is applied to the word line of theselected memory cell, a voltage close to the positive voltage is appliedto unselected word lines, and a voltage close to the negative voltage orground voltage is applied to unselected bit lines. This combinationapplies a strong positive voltage to the selected cell while applyingsmall voltages to half selected cells and strong reverse bias to diodesof unselected memory cells.

It is equally workable and equivalent to reverse bit lines and wordlines, and to locate the variable resistance phase change material atthe anodes rather than cathodes of the diodes.

The particular illustration of FIG. 6 assumes it is desirable to writeor read memory cell 1,2, which is labeled “SELECTED”. Memory cell 1,2 isconnected between word line WORD1 and bit line BIT2. As a novel featureof the invention, by applying a positive voltage of 1.2 volts (forreading) or 2.5 volts (for writing) to bit line BIT2 and applying groundvoltage of 0 volts to word line WORD1 while applying a voltage slightlyhigher than ground voltage to unselected bit lines (shown as bit linesBIT1 and BIT3) and applying a voltage, close to a write voltage, of 2volts to unselected word lines (shown as word line WORD2), it ispossible to write or read memory cell 1,2 without any disturbance ofunselected memory cells. This is true even if the actual array is verylarge. This is also true even if selected memory cell 1,2 starts in ahigh resistance state, requiring the higher voltage, for example 2.5volts, to bring the selected cell to its indeterminate state forwriting. Note that unselected memory cell 2,3 receives a back biasedvoltage of 2 volts minus 0.5 to 1 volt or a back bias of 0.5 to 1 volts,not enough to cause a breakdown of diode D2,3 or excessive leakagecurrent through these unselected cells. Half-selected memory cell 1,3(connected to selected word line WORD1 but unselected bit line BIT3)receives a forward bias of 0.5 to 1 volt, which, depending upon themanufacturing characteristics of diode D1,3 and regardless of thecurrent state of variable resistance R1,3, is less than the forwardthreshold of diode D1,3. Half-selected memory cell 2,2 receives a biasto diode D2, 2 of 2.5 volts minus 2 volts, which is a forward bias of0.5 volts. Preferably, the forward bias will be less than the thresholdof the diode, which is easily achieved by simply selecting the voltagescarefully. The threshold of a diode is the voltage across the diode atwhich measurable current begins to flow, and below which current isnegligible even when summing a thousand or more half-selected cells on abit line or word line. Although this discussion has used a 2.5-voltpower supply, lower voltages may be preferred for smaller geometrymemory cells. For example, voltages of 1.5 volts for WRITE and 0.75volts for READ may be preferred for sub-100-nanometer technology. Also,higher voltages may be preferred for larger geometry memory cells.

Thus, it can be seen that the biasing scheme of the present inventionproduces good isolation of unselected memory cells from the selectedmemory cell (or cells) and satisfactory isolation of half-selectedmemory cells. Since completely unselected memory cells (the majority inan array) are all back biased, leakage current through this large numberof cells is minimized. Any forward biasing of half-selected memory cellswill be below the diode turn-on threshold, and limited to one or a fewselected bit lines or word lines. Therefore, even for memory cells in alow-resistance state, leakage will be negligible.

To apply respective programming voltages, bit line drivers D1, D2, andD3 (and many more not shown) select between the unselected voltage of0.5 to 1 volt and the selected voltage of 2.5 volts, as controlled bydecoder outputs. In FIG. 6, decoder output 2 causes driver D2 to selectthe 2.5 volt voltage while decoder outputs 1 and 3 cause drivers D1 andD3 to select the 0.5 to 1 volt voltage. Similarly, word line decoderoutputs 1 and 2 cause word line driver W1 to select the ground voltageGND and word line driver W2 to select 2 volts. Structure for makingthese voltage selections is further described in connection with FIG. 5of commonly owned U.S. patent application Ser. No. 10/306,887 filed Nov.27, 2002 by Roy E. Scheuerlein, the subject matter of which isincorporated herein by reference.

Programming

To convert a chalcogenide in a crystalline, low-resistance state to anamorphous, high-resistance state, the chalcogenide must be brought to ahigh temperature, for example about 700 degrees C., then allowed to coolquickly. The reverse conversion from an amorphous, high-resistance stateto a crystalline, low-resistance state is achieved by heating to a lowertemperature, for example about 600 degrees C., then allowing thechalcogenide to cool relatively slowly. Circuit conditions are carefullycontrolled in a monolithic three dimensional memory array formedaccording to a preferred embodiment of the present invention to avoidinadvertent conversion of the chalcogenide of neighboring cells duringprogramming of a cell, or during repeated read events.

Programming the cell may change it from the first state to a secondstate (low to high resistance or high to low resistance). The cell cansubsequently be “erased”, returning it to the first state.

FIG. 7 shows shapes of pulses used to bring phase change material fromone state to another.

For writing a logic 1 (set) into a memory cell, current is brought to anintermediate level (set pulse), and held at the intermediate level for asufficient time for the crystalline structure of the phase changematerial to develop. In one embodiment, for one chalcogenide materialthat period of time is on the order of 500 to 1000 nanoseconds (0.5 to 1microsecond). Current depends upon processing conditions and varieswidely. In one embodiment, current through a single cell is about 20microamps for setting (programming a logic 1) and about 100 microampsfor resetting (programming a logic 0).

For writing a logic 0 (reset) into a memory cell, current is brought toa higher level (reset pulse), then quickly removed, so that the resetpulse lasts on the order of 200 nanoseconds. This high current followedby rapid cooling puts the material into an amorphous state with highresistance.

Current and Pulse Width Control

FIG. 8 shows circuitry for programming and reading the memory arraydescribed in connection with FIG. 6. FIG. 8 illustrates a circuit 70 forcontrolling both pulse width and current used for writing to selectedmemory cells. In order to control both the current and the pulse widthto the two values A and B for both setting and resetting as shown inFIG. 7, a current mirror circuit 70 includes a pulse width controltransistor 73 as well as conventional current mirror transistors 71 and72. Circuit 70 receives both a current control signal ICTRL in itsmaster arm and a pulse width control signal WCTRL for controllingtransistor 73 in series with its slave arm. In another embodiment, apulse width control transistor is located in series with the master arm,as indicated by 73 a. In yet another embodiment, the pulse width controltransistor is located between the master and slave arms as indicated by73 b. Alternatively, the pulse width control transistor may be locatedbetween the slave current mirror device and the supply voltageconnection, as indicated by 73 c.

When current mirror circuit 70 is to apply a WRITE signal to a selectedbit line, a bit line decoder selects, from the many bit lines (typicallyover 1000), one or more bit lines on which memory cells are to bewritten. Typically, a WORD of 8 bits, or some other size, will bewritten at one time. In the example of FIG. 8, bit line driver 74 isselected by its bit line decoder output 91 to apply a WRITE voltage tobit line 81. Bit line driver 74 receives both an unselected bit linebias UBL and a selected bit line bias SBL. The selected bit line biasSBL is generated by current minor circuit 70. As a novel feature of theinvention, the bit line bias SBL is current controlled, not voltagecontrolled. Thus a precise current for a precise period of time isapplied to the selected memory cell, bringing the selected memory cellto a desired temperature for a selected period and causing the selectedvalue to be reliably written to the selected memory cell.

FIG. 8 a shows an exemplary circuit for applying SBL and UBL. Whenactive low decoder output 91 applies a high signal, the unselected bitline bias voltage UBL BIAS is applied by driver 74 or 74B to bit line 81or 82 through an NMOS device 89 so that when bit line 81 is notselected, bit line 81 moves to this UBL voltage. However, when bit line81 is selected by a low decoder signal 91, the SBL signal line isselected by applying the low voltage to PMOS transistor 88. In thiscase, when control signal WCTRL turns on transistor 73, the SBL signalis applied to the selected bit line 81. More specifically, when pulseWCTRL is low, a current determined by pulse current control ICTRL isapplied as the SBL current through transistor 73 to driver 74 and to bitline 81.

If 8 or 16 bits are to be programmed simultaneously, there will be 8 or16 circuits 70 each applying its current as determined by its ICTRL fora period of time selected by its pulse control signal WCTRL (to controlwhether its bit line and selected memory cell will be written with a 0or a 1). Typically, a single current minor slave device 71 is associatedwith a single bit line, though master device 72 can be shared by severalcurrent minor slave devices 71. Two master devices 72, one for the setcurrent and one for the reset current, can control one or more slavedevices 71, by means of pass gates not shown, that interrupt theconnection between each device 71 and the master device 72. Thus eachcurrent minor slave device 71 provides the desired current for settingor resetting its selected memory cell.

If bit line 81 is to be programmed to a RESET state, a RESET pulse asshown in FIG. 7 is applied by circuit 70 and selected driver 74 to bitline 81. In the case of a RESET pulse, the pulse width control circuitgenerates a short duration signal WCTRL about 200 ns long while thepulse current control signal ICTRL causes transistor 71 to carry a highcurrent and thus heat the selected memory cell connected to bit line 81to a high temperature quickly. When WCTRL turns off transistor 73 afterabout 200 ns, the selected cell moves to an amorphous state with highresistance. If bit line 81 is to be programmed to a SET state, a SETpulse as shown in FIG. 7 is applied by circuit 70 and selected driver 74to bit line 81. In the case of a SET pulse, WCTRL holds transistor 73 onfor about 500 to 1000 ns while ICTRL causes transistor 71 to apply arelatively low current. Thus the selected memory cell converts to a lowresistance crystalline state.

Other bit line drivers 74B will also receive this high SBL current, butwill not be activated by their bit line decoder outputs, and thus willnot apply the selected bit line current SBL CURRENT to their respectivebit lines, but will continue to apply the unselected bit line biasvoltage UBL BIAS to their bit lines. Therefore these unselected bitlines will not be programmed by current minor circuit 70.

Other bit line drivers illustrated by driver 77 will also receive thesame bit line decoder output 91 as a control input. But these other bitline drivers each receive a separate SBL CURRENT from a correspondingcurrent mirror circuit 70, as represented in FIG. 8 by SBL2 CURRENT.Thus driver 77 illustrates one of several additional drivers for drivingdifferent bit lines in response to a single decoder signal forsimultaneously writing a multi-bit word.

Order of Programming

One problem when writing and reading memories is that switching occursvery fast, and sometimes a word line or bit line that was recentlyselected may not have returned to its resting voltage when the next wordline or bit line is selected, and a newly selected word line or bit linemay cause unintentional programming (or reading) of a cell connected toa previously selected word line or bit line. The order of switching thevoltages must be carefully controlled to avoid these unintended results.

For example, regarding FIG. 6, cell 1,2 has been selected by bringinglow word line WORD1 while bringing bit line BIT2 high. Other bit linesare at 0.5 to 1 volts and other word lines are at 2 volts, which reversebiases all unselected cells such as cell 2,3. Half-selected cells suchas cell 1,1 and cell 1,3 connected to selected word line WORD1 andhalf-selected cells such as cell 2,2 connected to bit line BIT2 receivea forward bias of about 0.5 to 1 volt, not enough to cause writing tothese half-selected cells. However, if the next WRITE operation is tocell 2,3 and bit line BIT3 is brought to 2.5 volts before word lineWORD1 has returned to its unselected value of 2 volts, cell 1,3 may beerroneously written. Thus, it is important to assure that all word linesare brought to their unselected voltage before applying bit line pulsesto the next bit lines.

It is also important to pull down all unselected or previously selectedbit lines and apply the high bit line pulse(s) before pulling down thenext word lines, because if any unselected bit lines are still high,pulling down another word line will cause a cell at the intersectionbetween the high but unselected bit line and the newly pulled down wordline to be disturbed.

To avoid any disturbances from incomplete switching between sequentialwriting (or also reading) of memory cells, as a novel feature of theinvention, a deselect control device 75 connects a previously connectedsignal line to the unselected voltage UBL. When pulse width controlsignal WCTRL has deactivated its pulse through transistor 73, deselectcontrol signal 75 goes high, and causes the unselected bias voltage UBLto be applied to the respective bit line, for example bit line 81illustrated in FIG. 8. Thus before a next write signal is applied, aprevious bit line, 81 in this case, has been pulled to the unselectedUBL level, and there is no chance of disturbing this previously selectedbit line with the next write signal. Following the example of FIG. 8, ifthe next memory cell to be accessed is connected to one of bit lines 82,then a corresponding one of bit line decoder outputs 92 causes acorresponding one of bit line drivers 74B to connect the SBL CURRENTnode to the corresponding one of bit lines 82. At the time ofconnection, the selected one of bit lines 82 will be at a voltage closeto UBL and will remain at this voltage until the next pulse controlsignal WCTRL applies current selected by ICTRL to this new bit line 82(current will be determined by ICTRL depending on whether the new memorycell is to be SET or RESET). Thus, to avoid any disturbance, aneffective order of switching is:

previously selected word lines are pulled to their unselected word linebias;

previously selected bit lines are pulled to their unselected bit linebias;

the selected word line is pulled to its selected low level;

the selected bit lines each receive their selected currents for aselected pulse width, depending on the value to be written;

the selected bit line voltages are returned to their unselected lowlevels; and

the selected word line voltages are returned to their unselected higherlevels.

In other cases a group of bit lines connected to a group of bit linedrivers such as driver 77 controlled by the same bit line decoder output91 are not all selected for writing. Some of the group are connected toa circuit 70 with device 73 turned off and their associated deselectcontrol device 75 turned on during the write pulse time for other bitslines in the group. In that way, the number of bit line driversconnected to a bit line decoder output can be larger than the number ofselected bit lines. For example 16 bit lines can be controlled by asingle decoder, but only 8 of the 16 are selected bit lines. The decodercan be constructed with a width equal to the width taken up by 16 bitlines rather than just 8 selected bit lines. This is particularly usefulin 3D memory arrays where the bit lines are constructed on four or evenmore layers and the width available for the decoder is accordinglyreduced to one fourth or even less of the normal width available for adecoder layout. In this case, various bit lines in the group that arecontrolled by the same decoder receive one of three conditions fromtheir respective SBL CURRENT nodes. The three conditions include 1) aset current, 2) a reset current or 3) for those bit lines not selected,an unselected bit line bias. The bit line drivers in the group pass anyof these three conditions to their associated bit lines through device88 of FIG. 8 a. Similarly, not all bit lines in the group arenecessarily selected for reading at the same time.

Of course, in other embodiments, diodes are reversed in orientation, andvoltage levels are correspondingly reversed. The important factors areto return selected lines to their unselected levels so that all diodesbecome reverse biased before initiating a next read or write operation.Note that when all cells are unselected, all diodes are reverse biased,thus minimizing leakage, and minimizing the chance that any cells willbe erroneously disturbed.

Note that while FIG. 8 illustrates circuitry for applying current toselected bit lines, circuitry is also provided for bringing word linevoltages to selected levels. However, since for word lines, selectedlevels are low rather than high, an n-channel transistors provides aselected word line bias. A circuit for driving array lines andappropriate for driving word lines in the present invention has beenillustrated by Roy E. Scheuerlein and Matthew P. Crowley in U.S. Pat.No. 6,856,572, entitled “Multi-Headed Decoder Structure Utilizing MemoryArray Line Driver with Dual Purpose Driver Device,” issued Feb. 15, 2005and incorporated herein by reference. See, for example, FIG. 3 of thatapplication and its discussion.

In one embodiment, several cells, all on one word line but several bitlines, are to be written simultaneously. In this embodiment, timing ofword line pulses is sufficient that the selected word line is brought toa low voltage for a time longer than any of the bit line pulses forwriting logic 0 (a short high current pulse to the bit line) and logic 1(a longer lower current pulse to the bit line, see FIG. 7) are applied.The word lines are preferably low resistance lines so that several bitson a word line can be written simultaneously without a voltage swing tothe word line that would disturb writing to any of the cells. In someembodiments, the word line is much shorter than a bit line, in oneembodiment, about one eighth the length of a bit line.

Reading

Referring back to FIG. 1, one can see that at a READ voltage, V1, it iseasy for circuitry to distinguish between the very high resistance andlow current of a memory cell in the RESET state (logic 0) and therelatively high current of a memory cell in the SET state (logic 1).This is true if there are no sneak paths through the array that drawcurrent from the selected bit line. Sneak paths are avoided by makingthe reference voltage VREF of the differential amplifier for reading(see FIG. 8 b) equal to the unselected word line bias. FIG. 9 shows suchvoltages applied to the memory cell array for reading memory cells. Asshown in FIG. 9, a voltage of 1.2 volts is applied to unselected wordlines such as WORD2 and also to the selected bit line BIT2. Since 1.2volts is applied to both unselected word lines and selected bit lines,there is no voltage drop through half-selected memory cells such as cell2,2 and therefore no sneak paths through half-selected cells such as2,2. For unselected cells such as 2,3 there is only a reverse biasthrough the diodes of these cells, and therefore the leakage current istoo small to affect the bias levels on unselected word lines such asWORD2 even though the number of unselected cells is large.

Operational amplifiers such as 76 shown in FIG. 8 (also 8 b) detectcurrent through the cell or cells selected for reading. (To assistunderstanding of the relationship between FIG. 8 and FIG. 9, FIG. 9includes current minor structure 70 and operational amplifier 76 alsoshown in FIG. 8.)

FIG. 8 b shows detail of the operational amplifier 76 of FIG. 8. In FIG.8 b, operational amplifier 85 maintains the SBL BIAS on the minus inputof operational amplifier 85 at the level of VREF, which in this exampleis 1.2 volts. Since feedback resistor 86 connects the READ outputvoltage to the SBL bias line (which is in turn connected through adriver and bit line to a selected cell), READ current through resistor86 is substantially equal to current through the selected cell, andtherefore indicates the state of the selected cell.

In order to avoid sneak paths through half-selected cells, the twoterminals of the half-selected cells may be brought to the same voltage.One simple way to accomplish this is to connect the positive inputterminals of operational amplifiers 85 to the voltage supply ofunselected word lines. Then operational amplifiers 85 will use feedbackresistors 86 to bring the selected bit lines and unselected word linesto the same voltage.

Three Dimensional Array Layout

In the case of a three-dimensional memory array, the group of cellscomprising a single word may be located in a vertical stack, and a wordline may include segments physically extending through many memorylayers connected by vertically oriented vias (sometimes called ziasbecause of their orientation in the z direction). The memory may bearranged such that a plurality of memory cells to be programmed togetherare connected to a single word line and may be on different layers ofmemory cells although they are to be programmed in response to a singleaddress. In another embodiment, a word line segment may be shared bymemory cells located in memory layers both above and below the wordline, thereby reducing the number of word line segments and reducingmanufacturing complexity. Bit lines may also be shared by memory cellsboth above and below.

FIG. 10 shows a portion of a three-dimensional memory array, showing auseful word line layout. Such a structure was also described byScheuerlein in commonly assigned U.S. patent application Ser. No.10/403,844 entitled “Word Line Arrangement Having Multi-Layer Word LineSegments for Three-Dimensional Memory Array”, which is incorporatedherein by reference. FIG. 9 of that patent application shows structurefor selecting such a memory block. In the layout of FIG. 10, a word lineWL accesses 16 memory cells arranged in a 4 by 4 array on four differentmemory cell layers within the 3-dimensional integrated circuit memoryarray. Sixteen bit lines BL1,1 through BL4,4 extend through this 4 by 4array of memory cells. For simplicity, only a small portion of the bitlines is shown. Additional memory cells such as shown in FIG. 10 arelocated in front of or behind the sixteen memory cells and bit lineportions shown, and are connected to different word lines not shown. Thesixteen memory cells shown in FIG. 10 may be considered to be a singleword, and a memory WRITE instruction may refer to all sixteen of thememory cells. However, depending upon the current needed for writing tothese 16 memory cells, a single current minor structure such asstructure 70 of FIG. 8 may supply the current to sequentially write to,for example, the four memory cells M1,1 through M4,1. A first pluralityof memory cells M1,1 through M1,4 may be written simultaneously ascontrolled by four current mirror structures 70. While word line WL isstill low (as described above in connection with FIG. 6), bit linesBL1,1 through BL1,4 are brought to their unselected levels (see abovediscussion of deselection control transistor 75 of FIG. 8) and bit linesBL2,1 through BL2,4 are selected by their respective bit line drivers(for example one of drivers 74B in FIG. 8) to receive controlled currentand pulse width for writing selected values into memory cells M2,1through M2,4. Subsequently, while word line WL is still selected, thethird and fourth columns of memory cells connected to word line WL arewritten.

In order to speed up the process, it is possible to apply controlcurrents ICTRL to current minors 70 that will drive one of the columnsin FIG. 10 before the new bit lines are selected and write pulses WCTRLare activated, and while previous bit lines are being brought to theirunselected voltage levels by turning on respective transistors 75.

FIG. 11 illustrates circuits for providing a selected pulse width WCTRLand a selected current ICTRL to the current minor 70 of FIG. 8. Pulsewidth selector circuit 110 includes a string of inverters 1 through 7,with a length selected by pulse width select multiplexer 8. OR gate 9 isa one-shot device that provides a low output signal only when its twoinput signals are both low. But the input signals are only both low whena low signal has been provided by the PULSE CLOCK input signal and hasnot yet propagated to OR gate 9 through the string of inverters. Thusthe low pulse occurs during this propagation time. Multiplexer 8 allowsfor two different pulse widths, causing a short pulse width when thePULSE CLOCK signal propagates only through inverters 1-3 and a longerpulse when the signal propagates through all seven inverters 1-7. Thepulse lengths can be precisely determined during manufacture byselecting the size and composition of the inverters.

Current select circuit 120 selects between two currents to be applied asICTRL to current minor 70. A current generator control signal IGENcontrols transistors 121 through 125. Transistor 121 is the master armfor a current minor in which the slave is either transistor 122 or thecombination of transistors 123 through 125. Note that one transistor 122provides the set control current ICTRLSet through multiplexer 126 as theICTRL current to pulse control transistor 72 in the master arm ofcurrent mirror 70, while three transistors 123 through 125 are connectedin parallel to multiplexer 126 to provide the reset current signalICTRLReset. Therefore ICTRLReset is higher and will cause the slave armof current mirror 70 to in turn provide a higher reset current as theSBL CURRENT (see also FIG. 8). Multiplexer 126 selects between its twoinput currents as controlled by the WRITE SELECT control signal. Theoutput of multiplexer 126 in combination with the WCTRL signaldetermines whether the SBL CURRENT will cause a set (logic 1) or reset(logic 0) to be written to the selected memory cell.

Clearly, other numbers of transistors and other circuits canalternatively accomplish this task. For example, FIG. 12 shows anothersuch circuit. In FIG. 12, current mirror 70 is replaced by a currentminor 170 having no pulse width control transistor. Pulse control isprovided by a different pulse width generator circuit 130 havingparallel OR gates 11 and 12 providing pulses from inverter strings ofdifferent lengths and a different current select circuit 140. The PULSEWIDTH SELECT signal causes one of transistors 14 and 15 to turn on,providing either a SET pulse width signal WCTRLSet to transistor 73 efor a low longer ICTRLSet current when a memory cell is to be set, or aRESET pulse width signal WCTRLReset to transistor 73 f for a high shortICTRLReset current when a memory cell is to be reset.

In another embodiment, four different unselected bias voltages areprovided, one for each bit line layer of each memory sub-array. In thisway, unselected bit lines on each layer may be biased independently ofunselected bit lines on other layers, the implementation of which isdescribed more fully in connection with FIGS. 8, 9, and 10 of U.S. Pat.No. 6,735,104, entitled “Memory Device with Row and Column DecoderCircuits Arranged in a Checkerboard Pattern Under a Plurality of MemoryArrays”, by Roy E. Scheuerlein, which is incorporated herein byreference. As described in this referenced patent, such unselected biasnode voltages may be advantageously generated by a group of fourunselected bias generator circuits, one associated with each layer. Eachsuch unselected bias generator circuit receives address signals whichare used to decode the selected memory plane (i.e., the selected arrayline layer) to generate bias voltages or conditions appropriately.Furthermore, in a programmable device, additional signals may bereceived which communicate the mode of operation to the unselected biasgenerator circuits. For example, the unselected bit line bias voltagemay likely be different for read mode than for write mode, and themulti-headed decoder circuits described above may be effectively used ineither mode of operation if the decoder provides a decoded output 91having suitable voltage levels.

In an alternative embodiment, memory line drivers are arranged onopposite sides of the memory array and control alternate memory lines.Since the drivers and not the memory line width control memory linepitch, the memory line pitch can be twice as small as would be allowedby the layout of the memory line driver. Such a layout is illustrated inFIG. 4 of the above referenced U.S. Pat. No. 6,735,104.

In preferred embodiments of the invention each array line driver circuit(i.e., array line decoder “head”) preferably includes two transistors,as described herein in connection with FIG. 8 a. Nonetheless, otherconfigurations are contemplated for the heads. For example, N-channeltransistors may be exclusively used if the various bias conditions lendthemselves to such use. Moreover, additional transistors may be employedto accomplish additional functions if layout area permits. Whilethree-dimensional arrays have been discussed in detail, multi-headeddecoder circuits are also useful in memory arrays having only one planeof memory cells, although the layout density advantages of multi-headeddecoders are more beneficial in three-dimensional arrays having morethan one memory plane.

Word lines may also be referred to as row lines or X-lines, and bitlines may also be referred to as column lines or Y-lines. Thedistinction between “word” lines and “bit” lines may carry at least twodifferent connotations to those skilled in the art. When reading amemory array, it is assumed by some practitioners that word lines areheld at a selected bias level and bit lines are sensed. In this regard,X-lines (or word lines) are frequently, but not always, connected to thecathode terminal of the memory cells, and Y-lines (or bit lines) arefrequently, but not always, connected to the anode terminal of thememory cells. Secondly, the memory organization (e.g., data bus width,number of bits simultaneously read during an operation, etc.) maysuggest one set of the two array lines is more aligned with data “bits”rather than data “words.” As used herein, word lines and bit linesrepresent orthogonal array lines, and has followed the common assumptionin the art that word lines are driven and bit lines are sensed. But thebenefits of the invention can be applied either way.

Although, the above discussion focuses on three-dimensional memoryarrays, as used herein, a memory array may be a two dimensional (planar)memory array having a memory level formed in a substrate, oralternatively formed above the substrate. The substrate may either be amonocrystalline substrate, such as might include support circuitry forthe memory array, or may be another type of substrate, which need notnecessarily include support circuitry for the memory array. For example,certain embodiments of the invention may be implemented utilizing asilicon-on-insulator (SOI) structure, and others utilizing asilicon-on-sapphire (SOS) structure. Alternatively, a memory array maybe the above-discussed three-dimensional array having more than oneplane of memory cells. The memory planes may be formed above a substrateincluding support circuitry for the memory array. As used herein, anintegrated circuit having a three-dimensional memory array is assumed tobe a monolithic integrated circuit, rather than an assembly of more thanone monolithic integrated circuit packaged together or in closeproximity, or die-bonded together.

Integrated circuits incorporating a memory array usually subdivide thearray into a sometimes large number of smaller arrays, also sometimesknown as sub-arrays. As used herein, an array is a contiguous group ofmemory cells having contiguous word and bit lines generally unbroken bydecoders, drivers, sense amplifiers, and input/output circuits. Anintegrated circuit including a memory array may have one array, morethan one array, or even a large number of arrays. U.S. Pat. No.7,465,951, issued on Dec. 16, 2008 and incorporated herein by reference,describes memory levels not all having the same type of memory cell, anddescribes memory levels having cells of one type alternating with memorylevels using other types of memory cells. It also describes combiningwrite-many phase change memory cells with programmable read-only memorycells. It is also envisioned that memory cells within the same array canhave two modes of operation, one mode in which antifuses in a sub-arrayof the array have all been ruptured to produce an addressable memory,and another mode in which selected antifuses in another sub-array of thearray have been ruptured in a pattern to show identifiablecharacteristics of the memory such as a serial number, controlinformation, trimming analog circuits, setting redundancy addressmatching information, or other customizable features of the device. Inthis case, a useful memory array structure includes memory cells havinga phase change element, an antifuse, and a diode, so that any memorycell can be used for either storing frequently re-written data orstoring the control information.

Based upon the teachings of this disclosure, it is expected that one ofordinary skill in the art will be readily able to practice the presentinvention. The descriptions of the various embodiments provided hereinare believed to provide ample insight and details of the presentinvention to enable one of ordinary skill to practice the invention.Nonetheless, in the interest of clarity, not all of the routine featuresof the implementations described herein are shown and described. Itshould, of course, be appreciated that in the development of any suchactual implementation, numerous implementation-specific decisions mustbe made in order to achieve the developer's specific goals, such ascompliance with application- and business-related constraints, and thatthese specific goals will vary from one implementation to another andfrom one developer to another. Moreover, it will be appreciated thatsuch a development effort might be complex and time-consuming, but wouldnevertheless be a routine undertaking of engineering for those ofordinary skill in the art having the benefit of this disclosure.

For example, decisions as to the number of memory cells within eacharray or sub-array, the particular configuration chosen for word lineand bit line pre-decoder and decoder circuits and bit line sensingcircuits, as well as the word organization, are all believed to betypical of the engineering decisions faced by one skilled in the art inpracticing this invention in the context of developing acommercially-viable product. Similarly, the number of array blocks andthe number of memory planes are also a matter of engineering decision.Nonetheless, even though a mere routine exercise of engineering effortis believed to be required to practice this invention, such engineeringefforts may result in additional inventive efforts, as frequently occursin the development of demanding, competitive products.

While circuits and physical structures are generally presumed, it iswell recognized that in modern semiconductor design and fabrication,physical structures and circuits may be embodied in computer readabledescriptive form suitable for use in subsequent design, test orfabrication stages as well as in resultant fabricated semiconductorintegrated circuits. Accordingly, claims directed to traditionalcircuits or structures may, consistent with particular language thereof,read upon computer readable encodings and representations of same,whether embodied in media or combined with suitable reader facilities toallow fabrication, test, or design refinement of the correspondingcircuits and/or structures. The invention is contemplated to includecircuits, related methods or operation, related methods for making suchcircuits, and computer-readable medium encodings of such circuits andmethods, all as described herein, and as defined in the appended claims.As used herein, a computer-readable medium includes at least disk, tape,or other magnetic, optical, semiconductor (e.g., flash memory cards,ROM), or electronic medium and a network, wireline, wireless or othercommunications medium. An encoding of a circuit may include circuitschematic information, physical layout information, behavioralsimulation information, and/or may include any other encoding from whichthe circuit may be represented or communicated.

While certain embodiments have been described in the context of a memorythat incorporates a diode as an isolation device in each cell, theteachings of the present invention are believed advantageous for usewith memory cells that incorporate any non-ohmic conductive isolationdevices such as a MIM device or an organic polymer non-ohmic conductivedevice as an isolation device in each cell. Such non-ohmic conductivedevices are included in the general interpretation of “diode” that hasbeen used in the descriptions and claims.

The foregoing detail has described only a few of the many possibleimplementations of the present invention. For this reason, this detaileddescription is intended to illustrate, not to limit. Variations andmodifications of the embodiments disclosed herein may be made based onthe description set forth herein, without departing from the scope andspirit of the invention. It is only the following claims, including allequivalents, that are intended to define the scope of this invention. Inparticular, even though the preferred embodiments are described in thecontext of a chalcogenide phase change material, the teachings of thepresent invention are believed advantageous for use with other types ofmemory cells that contain a memory material that is reversiblyswitchable from one state to another by thermal activation. Whilecertain embodiments have been described in the context of athree-dimensional, field-programmable, memory array, it should beappreciated that such an array is not necessarily required. Moreover,the embodiments described above are specifically contemplated to be usedalone as well as in various combinations. Accordingly, otherembodiments, variations, and improvements not described herein are notnecessarily excluded from the scope of the invention.

1. In an integrated circuit comprising an array of memory cells eachcomprising a phase change material, a structure for simultaneouslywriting a plurality of bits to the array of memory cells comprising: aplurality of pulse control structures acting simultaneously, each of thepulse control structures able to operate in three modes, a first mode inwhich the pulse control structure provides a high current of shortduration to one of the memory cells, a second mode in which the pulsecontrol structure provides a current lower than the high current and oflonger duration than the short duration to one of the memory cells, anda third mode in which the pulse control structure provides no current toone of the memory cells, wherein each of the plurality of pulse controlstructures provides an output signal received by a plurality of drivercircuits, each of the driver circuits selecting the output signal ifselected by a decoder signal selecting the driver circuit.
 2. Thestructure of claim 1, wherein the plurality of bits are in memory cellsin a plurality of memory layers of the memory array.
 3. The structure ofclaim 1, wherein the current lower than the high current is less than60% of the high current.
 4. The structure of claim 3, wherein thecurrent lower than the high current is less than 50% of the highcurrent.
 5. The structure of claim 1, wherein the longer duration ismore than twice the short duration.
 6. The structure of claim 5, whereinthe longer duration is about five times as long as the short duration.7. The structure of claim 1, wherein each of the memory cells eachcomprising a phase change material also further comprises a diode inseries with the phase change material.
 8. In an integrated circuitcomprising an array of memory cells each comprising a phase changematerial, a structure for simultaneously writing a plurality of bits tothe array of memory cells comprising: a plurality of pulse controlstructures acting simultaneously, each of the pulse control structuresable to operate in three modes, a first mode in which the pulse controlstructure provides a high current of short duration to one of the memorycells, a second mode in which the pulse control structure provides acurrent lower than the high current and of longer duration than theshort duration to one of the memory cells, and a third mode in which thepulse control structure provides no current to one of the memory cells,wherein the plurality of pulse control structures acting simultaneouslyeach provides a current selectable by a plurality of bit line drivercircuits, only one of which selects the current at one time.
 9. Thestructure of claim 8, wherein the plurality of bits are in memory cellsin a plurality of memory layers of the memory array.
 10. The structureof claim 8, wherein the current lower than the high current is less than60% of the high current.
 11. The structure of claim 8, wherein thecurrent lower than the high current is less than 50% of the highcurrent.
 12. The structure of claim 8, wherein the longer duration ismore than twice the short duration.
 13. The structure of claim 8,wherein the longer duration is about five times as long as the shortduration.
 14. In an integrated circuit comprising an array of memorycells each comprising a phase change material, a structure forsimultaneously writing a plurality of bits to the array of memory cellscomprising: a plurality of pulse control structures actingsimultaneously, each of the pulse control structures able to operate inthree modes, a first mode in which the pulse control structure providesa high current of short duration to one of the memory cells, a secondmode in which the pulse control structure provides a current lower thanthe high current and of longer duration than the short duration to oneof the memory cells, and a third mode in which the pulse controlstructure provides no current to one of the memory cells, wherein thepulse control structures acting simultaneously provide current to aplurality of bit line driver circuits commonly controlled by a bit linedecoder output signal.
 15. The structure of claim 14, wherein theplurality of bits are in memory cells in a plurality of memory layers ofthe memory array.
 16. The structure of claim 14, wherein the currentlower than the high current is less than 60% of the high current. 17.The structure of claim 14, wherein the current lower than the highcurrent is less than 50% of the high current.
 18. The structure of claim14, wherein the longer duration is more than twice the short duration.19. The structure of claim 14, wherein the longer duration is about fivetimes as long as the short duration.